FDS8949-F085 - Dual N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDS8949-F085
Manufacturer	ON Semiconductor
File Size	461.82 KB
Description	Dual N-Channel MOSFET
Datasheet	FDS8949-F085-ONSemiconductor.pdf

FDS8949-F085 Product details

Description

These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.Applications Inverter Power suppliers D2 D2 D1 D1 SO-8 Pin 1 G2 S2 G1 S1 MOSFET Maximum Ratings TA =

Features

Max rDS(on) = 29mΩ at VGS = 10V.
Max rDS(on) = 36mΩ at VGS = 4.5V.
Low gate charge.
High performance trench technology for extremely low rDS(on).
High power and current handling capability.
Qualified to AEC Q101.
RoHS compliant General.

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Published: Nov 20, 2024 |