FDS8949 - Dual N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDS8949
Manufacturer	Fairchild Semiconductor
File Size	335.73 KB
Description	Dual N-Channel MOSFET
Datasheet	FDS8949_FairchildSemiconductor.pdf

FDS8949 Product details

Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Inverter Power suppliers D2 D2 D1 D1 SO-8 Pin 1 S1 G1 G2 S2 MOSFET Maximum Ratings TA = 25°C

Features

Max rDS(on) = 29mΩ at VGS = 10V.
Max rDS(on) = 36mΩ at VGS = 4.5V.
Low gate charge.
High performance trench technology for extremely low rDS(on).
High power and current handling capability.
RoHS compliant tm General.

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Published: Apr 2, 2007 |