FDS8947A - Dual P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FDS8947A
Manufacturer	Fairchild Semiconductor
File Size	264.44 KB
Description	Dual P-Channel MOSFET
Datasheet	FDS8947A_FairchildSemiconductor.pdf

SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

-4.0 A, -30 V. RDS(ON) = 0.052Ω @ VGS = -10 V RDS(ON) = 0.080Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 4 3 2 1 S FD 7A 4 89 pin 1 6 SO-8 S1 G1 S2 G2 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.

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Published: Apr 2, 2007 |