Datasheet4U Logo Datasheet4U.com

FDS8935 - MOSFET

📥 Download Datasheet

Preview of FDS8935 PDF
datasheet Preview Page 2 datasheet Preview Page 3

FDS8935 Product details

Description

Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness. High power and current handling capability in a widely used surface mount package 100% UIL Tested

Features

📁 FDS8935 Similar Datasheet

  • FDS8949 - Dual N-Channel MOSFET (ON Semiconductor)
  • FDS8949-F085 - Dual N-Channel MOSFET (ON Semiconductor)
  • FDS8958A-F085 - Dual N&P-Channel MOSFET (ON Semiconductor)
  • FDS8958B - Dual N & P-Channel Power MOSFET (ON Semiconductor)
  • FDS8978 - N-Channel MOSFET (ON Semiconductor)
  • FDS8984 - N-Channel MOSFET (ON Semiconductor)
  • FDS8984-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDS8984-F40 - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor
Published: |