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F650B N-Channel MOSFET

F650B Description

F650B-VB www.VBsemi.com F650B-VB Datasheet N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(on) (:) 0.058at VGS = 10 V ID (A) 35 FE.

F650B Features

* TrenchFET® Power MOSFETS
* 175 °C Junction Temperature
* New Low Thermal Resistance Package

F650B Applications

* Industrial D GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current

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Datasheet Details

Part number
F650B
Manufacturer
VBsemi
File Size
258.07 KB
Datasheet
F650B-VBsemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET VBsemi
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