UJ3C120080K3S Datasheet (UnitedSiC)

UJ3C120080K3S, MOSFET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE

UJ3C120080K3S Features

* S (3) Marking UJ3C120080K3S w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 Typical applications w EV charging w PV inverters w Switch mod