Description
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
Features
- w Typical on-resistance RDS(on),typ of 16mW w Maximum operating temperature of 175°C
w Excellent reverse recovery
w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions)
. Part Number UF3SC120016K3S
Package TO-247-3L
Marking UF3SC120016K3S
Typical.
UF3SC120016K3S-UnitedSiC.pdf
