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UF3C120080K4S - high performance F3 SiC fast JFET

Description

United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Features

  • 1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical.

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Datasheet Details

Part number UF3C120080K4S
Manufacturer UnitedSiC
File Size 467.35 KB
Description high performance F3 SiC fast JFET
Datasheet download datasheet UF3C120080K4S Datasheet

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Full PDF Text Transcription (Reference)

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1200V-80mW SiC Cascode DATASHEET UF3C120080K4S CASE CASE D (1) Rev. A, January 2019 Description United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.