UF3C120150K4S - MOSFET

Product Overview

UnitedSiC

Datasheet Details

Part number	UF3C120150K4S
Manufacturer	UnitedSiC
File Size	681.56 KB
Description	MOSFET
Datasheet	UF3C120150K4S Datasheet
Additional preview pages of the UF3C120150K4S datasheet.

Product details

Description

United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Features

w Typical on-resistance RDS(on),typ of 150mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical.

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Published: Apr 15, 2020 |