UF3C120080K3S - SiC MOSFET

Product Overview

UnitedSiC

Datasheet Details

Part number	UF3C120080K3S
Manufacturer	UnitedSiC
File Size	513.42 KB
Description	SiC MOSFET
Datasheet	UF3C120080K3S Datasheet
Additional preview pages of the UF3C120080K3S datasheet.

Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Features

w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) . Typical.

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Published: Apr 15, 2020 |