CHA7215-99F - X-band High Power Amplifier

United Monolithic Semiconductors

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Datasheet Details

Part number	CHA7215-99F
Manufacturer	United Monolithic Semiconductors
File Size	310.65 KB
Description	X-band High Power Amplifier
Datasheet	CHA7215-99F-UnitedMonolithicSemiconductors.pdf

CHA7215-99F Product details

Description

The CHA7215-99F is a monolithic three- stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power IN associated to 35% power added efficiency at 4dBc and a high robustness on mismatch load.This device is manufactured using 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges.VG1R VD1 VD1 VG2R VD2 VD2 VG3R VD3 OUT VG3R VD3 Main

Features

 0.25 µm Power pHEMT Technology  Frequency band: 8.5.
11.5GHz  Output power: 39.5dBm at saturation  High linear gain: 28dB  Power added efficiency: 34% @4dBc  Quiescent bias point: Vd=8V, Id=2.3A  Chip size: 5 x 3.31 x 0.07mm Output Power (dBm) Output Power versus Frequency @Pin=19dBm 41 40,5 40 39,5 39 38,5 38 37,5 37 36,5 36 Temp=-40°C Temp=+20°C 35,5 Temp=+80°C 35 8 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Main Electrical Characteristics Vd=8V, I.

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Published: Jan 27, 2025 |