CHA7114-99F - X Band High Power Amplifier

United Monolithic Semiconductors

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Datasheet Details

Part number	CHA7114-99F
Manufacturer	United Monolithic Semiconductors
File Size	418.08 KB
Description	X Band High Power Amplifier
Datasheet	CHA7114-99F-UnitedMonolithicSemiconductors.pdf

CHA7114-99F Product details

Description

The CHA7114-99F is a monolithic two-stage GaAs high power amplifier designed for X band applications. The backside of the chip is both RF and DC grounded Bond pads and back side are gold plated for compatibility with eutectic die attach method and thermo-compression bonding process.Main

Features

0.25µm Power pHEMT Technology.
8.5.
11.5GHz Frequency Range.
8W Output Power @ 4dBcp.
High PAE: > 40% @ 4dBcp.
20dB nominal Gain.
Quiescent Bias point: Vd = 8V, Id = 2A.
Chip size: 4.41 x 3.31 x 0.07mm Pout (dBm) & PAE (%) & Gain (dB) IN 50 45 40 35 30 25 20 15 10 8 Vg2 Vd2 Vg1 Vd1 Vg1 Vd1 Vg2 Vd2 OUT PAE @ 4dBc Pout @ 4dBc Linear Gain Pulse : 25µs 10% 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Main Characteristics Tamb = +25°C (Tamb is the bac.

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Published: Jan 7, 2025 |