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CHA3666-FAB - Low Noise Amplifier

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United Monolithic Semiconductors

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CHA3666-FAB Low Noise Amplifier by United Monolithic Semiconductors - Datasheet Preview — Datasheet preview – CHA3666-FAB

Datasheet Details

Part number	CHA3666-FAB
Manufacturer	United Monolithic Semiconductors
File Size	894.76 KB
Description	Low Noise Amplifier
Datasheet	CHA3666-FAB Datasheet
Additional preview pages of the CHA3666-FAB datasheet.

Product details

Description

The CHA3666-FAB is a two-stage self-biased wide band monolithic Low Noise Amplifier.

Features

Broadband performance 6-16GHz.
1.8dB typical Noise Figure.
24dBm 3rd order intercept point.
16dBm power at 1dB compression.
21dB gain.
Low DC power consumption.
6x6mm² metal ceramic hermetic package Linear Gain (dB) 30 25 20 15 10 +25 C +85 C -40 C 5 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 16 GHz NF Noise figur.

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Published: Jan 26, 2025 |