CHA3666-FAB Datasheet (United Monolithic Semiconductors)

CHA3666-FAB, Low Noise Amplifier

The CHA3666-FAB is a two-stage self-biased wide band monolithic Low Noise Amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is proposed in leadless surface mount hermetic metal

CHA3666-FAB Features

* Broadband performance 6-16GHz

* 1.8dB typical Noise Figure

* 24dBm 3rd order intercept point

* 16dBm power at 1dB compression

* 21dB gain

* Low DC power consumption

* 6x6mm² metal ceramic hermetic package Linear Gain (dB) 30 25 20 15 10 +25 C +85 C -40 C 5 0