CHA2069-FAB Datasheet (United Monolithic Semiconductors)

CHA2069-FAB, Low Noise Amplifier

The CHA2069-FAB is a three-stage self-biased wide band monolithic low noise amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is proposed in leadless surface mount hermetic met

CHA2069-FAB Features

* Broadband performance 16-32GHz

* 2.5dB typical Noise Figure

* 20dBm 3rd order intercept point

* 22dB gain

* Low DC power consumption

* 6x6mm² metal ceramic hermetic package Linear Gain 30 25 20 15 10 +25 C -40 C +85 C 5 0 10 15 20 25 30 35 40 Frequency (G