F30NM65 650V N-CHANNEL MOSFET

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD F30NM65 30A, 650V N-CHANNEL SUPER-JUNCTION MOSFET * .
The UTC F30NM65 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode.

📥 Download Datasheet

F30NM65 Datasheet Preview — Preview of F30NM65 PDF

Datasheet Specifications

Part number: F30NM65
Manufacturer: UTC
File Size: 719.11 KB
Datasheet: F30NM65-UTC.pdf
Description: 650V N-CHANNEL MOSFET

Features

* RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=15A
* Fast body diode MOSFET technology
* Low switching losses due to reduced Qrr
* Single Pulse Avalanche Energy Rated
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Avalanche energy tested 9 1 TOL

Applications

* such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. 1 TO-220 1 TO-247 Power MOSFET 1 TO-220F1 1 TO-263

F30NM65 Distributors

📁 Related Datasheet

F3002 F3003 F3007S F3027 F30D05 F30D10

📌 All Tags

F30NM65 650V N-CHANNEL MOSFET UTC

UTC F30NM65-like datasheet

F30NM60