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F30NM65 650V N-CHANNEL MOSFET

F30NM65 Description

UNISONIC TECHNOLOGIES CO., LTD F30NM65 30A, 650V N-CHANNEL SUPER-JUNCTION MOSFET * .
The UTC F30NM65 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode.

F30NM65 Features

* RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=15A
* Fast body diode MOSFET technology
* Low switching losses due to reduced Qrr
* Single Pulse Avalanche Energy Rated
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Avalanche energy tested 9 1 TOL

F30NM65 Applications

* such. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. 1 TO-220 1 TO-247 Power MOSFET 1 TO-220F1 1 TO-263

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Datasheet Details

Part number
F30NM65
Manufacturer
UTC
File Size
719.11 KB
Datasheet
F30NM65-UTC.pdf
Description
650V N-CHANNEL MOSFET

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650V N-CHANNEL MOSFET UTC
UTC F30NM65-like datasheet