F30NM60 Datasheet - UTC

F30NM60 N-CHANNEL MOSFET

The UTC F30NM60 is a N-Channel enhancement mode silicon gate super junction power MOSFET with fast body diode and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usuall.

F30NM60 Features

* RDS(ON) ≤ 0.13 Ω @ VGS=10V, ID=15A

* Fast body diode MOSFET technology

* High Switching Speed

* 100% Avalanche Tested

* SYMBOL (2) Drain (5) Drain Power MOSFET (1) Gate (3) Source TO-220 / TO-220F1 TO-247 / TO-263 (1) Gate (2) Driver Source (3, 4) Power Source DFN8080-4

F30NM60-UTC.pdf