PD533BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 14mΩ @VGS = -10V ID -51A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM -51 -40 -150 Avalanche Current IAS -38 Avalanche Energy L = 0.1mH EAS 72.2 Power Dissipation TC= 25 °C TC= 100°C PD 65 42 J.