PD516BA Datasheet - UNIKC

PD516BA N-Channel MOSFET

PD516BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7.5mΩ @VGS = 10V ID 55A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 55 35 150 Avalanche Current IAS 24 Avalanche Energy L=0.1mH EAS 28.7 Power Dissipation TC= 25 °C TC= 100°C PD 39 15 Junction & .

PD516BA Datasheet (468.04 KB)