PD515BA Datasheet - UNIKC

PD515BA P-Channel MOSFET

PD515BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 65mΩ @VGS = -4.5V ID -15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current3 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM -15 -9.8 -30 Avalanche Current IAS -11 Avalanche Energy L = 0.1mH EAS 6 Power Dissipation TC= 25 °C TC= 100°C PD 25 10 Junc.

PD515BA Datasheet (773.06 KB)