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P2804ND5G
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 40V
RDS(ON) 28mΩ @VGS =10V
-40V
48mΩ @VGS = -10V
ID 21A -16A
Channel N P
TO-252-5
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 40 VDS P -40
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current
N 21
TC = 25 °C
P -16
ID N 13
TC = 100°C
P -10
Pulsed Drain Current1
N 50 IDM P -50
Avalanche Current
N 26 IAS P -26
Avalanche Energy
L = 0.1mH
N 33 EAS P 33
Power Dissipation
TC = 25 °C TC = 100 °C
PD
N 21
P N
8 P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
REV 1.
P2804ND5G Datasheet
