P2804HVG
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 28mΩ @VGS = 10V
ID 7A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA= 70 °C
ID IDM
7 6 40
Power Dissipation
TA = 25 °C TA= 70°C
2 1.28
Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg TL
-55 to 150 275
UNITS V
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Lead
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle 1%
SYMBOL Rq JL Rq JA
TYPICAL
MAXIMUM 31 62.5
UNITS °C / W
REV 1.0 1 2014/9/4
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER...
