P2804NVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 40V
RDS(ON) 28mΩ @VGS = 10V
-40V
65mΩ @VGS = -10V
ID Channel 7A N -6A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 40 VDS P -40
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current
TA = 25 °C TA = 70 °C
N7 P -6 ID N 6 P -5
Pulsed Drain Current1
N 20 IDM P -20
Power Dissipation
TA = 25 °C TA = 70 °C
N 2
P PD
N 1.3
Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.)
TJ, Tstg TL
-55 to 150 275
UNITS V
W °C
REV 1.1
1 2014-4-14
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle 1%.
SYMBOL Rq...
