l l l l l l l l
.650 (16.51)-
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching HermeticMetaVCeramic Package
.225.
.010 (5.72Z.25)
Absolute Maximum Ratings at 25°C
.225t010 (5.72i.25) EMIlYER
167i.010
uNLE. ss.
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