NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
I . I00 I / I ;2.54>--- ,250
-.152-. x0 (3.86-25) 75.35>-7 ,130 -7(3.30:~
I
I
.034'.031
StorageTemperature
T STG
-65 to +200
“‘2
UNLESS
IT-ERWISE
NCTEC,.
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