NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometty Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
.225+010 (5.?2%2!5>
t
mLEcTIR
+j,j --A +f PAS I .130 (3.30) fl 2%
Absolute Maximum Ratings at 25°C
Parameter Collector-Emitter Voltage Symbol VES Rating 65 Units V
--6.72t.25)
Emitter-Base Voltage
UNLESS.
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