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MA4AGBLP912 AlGaAs Beam Lead PIN Diode

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Description

www.DataSheet4U.com AlGaAs Beam Lead PIN Diode V 1.00 MA4AGBLP912 .
M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide Anode Enhanced, Beam Lead PIN Diode.

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Datasheet Specifications

Part number
MA4AGBLP912
Manufacturer
Tyco Electronics
File Size
113.51 KB
Datasheet
MA4AGBLP912_TycoElectronics.pdf
Description
AlGaAs Beam Lead PIN Diode

Applications

* The ultra low capacitance of the MA4AGBLP912 device allows use through W-band (110 GHz) applications. The low RC product and low profile of the PIN diodes makes it ideal for use in microwave and millimeter wave switch designs, where lower insertion loss and higher isolation are required. The + 10 mA

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