Datasheet4U Logo Datasheet4U.com

TGF2023-2-02 - 12 Watt Discrete Power GaN on SiC HEMT

TGF2023-2-02 Description

Applications * Defense & Aerospace * Broadband Wireless TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Product .
The TriQuint TGF2023-2-02 is a discrete 2.

TGF2023-2-02 Features

* Frequency Range: DC - 18 GHz
* 40.1 dBm Nominal PSAT at 3 GHz
* 73.3% Maximum PAE
* 21 dB Nominal Power Gain at 3 GHz
* Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA
* Technology: TQGaN25 on SiC
* Chip Dimensions: 0.82 x 0.92 x 0.10 mm Functional

TGF2023-2-02 Applications

* Defense & Aerospace

📥 Download Datasheet

Preview of TGF2023-2-02 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
TGF2023-2-02
Manufacturer
TriQuint Semiconductor
File Size
1.84 MB
Datasheet
TGF2023-2-02-TriQuintSemiconductor.pdf
Description
12 Watt Discrete Power GaN on SiC HEMT

📁 Related Datasheet

  • TGF2023-2-01 - SiC HEMT (Qorvo)
  • TGF2023-2-20 - 90 Watt Discrete Power GaN on SiC HEMT (TriQuint)
  • TGF2021-08 - DC - 12 GHz Discrete power pHEMT (Tyco Electronics)
  • TGF24A - Current Transducers (Topstek)
  • TGF25A - Current Transducers (Topstek)
  • TGF2977-SM - RF Transistor (qorvo)
  • TGF10A - Current Transducers (Topstek)
  • TGF11A - Current Transducers (Topstek)

📌 All Tags

Watt Discrete Power GaN SiC HEMT TriQuint Semiconductor
TriQuint Semiconductor TGF2023-2-02-like datasheet