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TGF2023-02 - 12 Watt Discrete Power GaN on SiC HEMT

TGF2023-02 Description

TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key .
The TriQuint TGF2023-02 is a discrete 2.

TGF2023-02 Features

* Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.92 x 0.10 mm

TGF2023-02 Applications

* Bias conditions: Vd = 28 V, Idq = 250 mA, Vg = -3.6 V Typical

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Datasheet Details

Part number
TGF2023-02
Manufacturer
TriQuint Semiconductor
File Size
395.00 KB
Datasheet
TGF2023-02_TriQuintSemiconductor.pdf
Description
12 Watt Discrete Power GaN on SiC HEMT

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📌 All Tags

Watt Discrete Power GaN SiC HEMT TriQuint Semiconductor
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