TGF2023-2-01 SiC HEMT

Qorvo

TGF2023-2-01 Description

TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT .
6 Watt GaN HEMT 1 of 23 www.

TGF2023-2-01 Features

* advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-01 typically provides 37.7 dBm of saturated output power with power gain of 20.7 dB at 3 GHz. The maximum power added efficiency is 71.6 % which makes the TGF2023-2-01 ap

📥 Download Datasheet

TGF2023-2-01 Datasheet Preview — Preview of TGF2023-2-01 PDF

Datasheet Details

Part number: TGF2023-2-01
Manufacturer: Qorvo
File Size: 3.42 MB
Datasheet: TGF2023-2-01-Qorvo.pdf
Description: SiC HEMT

📁 Related Datasheet

TGF2023-2-02 - 12 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)
TGF2023-2-05 - 25 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)
TGF2023-2-10 - 50 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)
TGF2023-2-20 - 90 Watt Discrete Power GaN on SiC HEMT (TriQuint)
TGF2023-20 - 100 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)
TGF2023-01 - 6 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)
TGF2023-02 - 12 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)
TGF2023-05 - 25 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)

📌 All Tags

SiC HEMT Qorvo

Qorvo TGF2023-2-01-like datasheet