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TGF2023-2-01 - SiC HEMT

TriQuint Semiconductor

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Datasheet Details

Part number	TGF2023-2-01
Manufacturer	TriQuint Semiconductor
File Size	2.20 MB
Description	SiC HEMT
Datasheet	TGF2023-2-01-TriQuintSemiconductor.pdf

TGF2023-2-01 Product details

Description

The TriQuint TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz.

Features

Frequency Range: DC - 18 GHz.
38 dBm Nominal PSAT at 3 GHz.
71.6% Maximum PAE.
18 dB Nominal Power Gain at 3 GHz.
Bias: VD = 12 - 32 V, IDQ = 25 - 125 mA.
Technology: TQGaN25 on SiC.
Chip Dimensions: 0.82 x 0.66 x 0.10 mm Functional Block Diagram General.

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Other Datasheets by TriQuint Semiconductor

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TGF2023-2-10 - 50 Watt Discrete Power GaN on SiC HEMT
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Published: May 6, 2016 |