T1G6000528-Q3 GaN RF Power Transistor

TriQuint Semiconductor

Description

T1G6000528-Q3 7W, 28V, DC * 6 GHz, GaN RF Power Transistor Applications * Wideband and narrowband defense and commercial communicati.
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Datasheet Specifications

Part number: T1G6000528-Q3
Manufacturer: TriQuint Semiconductor
File Size: 1.62 MB
Datasheet: T1G6000528-Q3_TriQuintSemiconductor.pdf
Description: GaN RF Power Transistor

Features

* Frequency: DC to 6 GHz
* Linear Gain: >10 dB at 6 GHz
* Operating Voltage: 28 V
* Output Power (P3dB): >7 W at 6 GHz
* Lead-free and RoHS compliant

Applications

* Wideband and narrowband defense and commercial communication systems
* General Purpose RF Power
* Jammers
* Radar
* Professional radio systems
* WiMAX
* Wideband amplifiers

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T1G6000528-Q3 GaN Power Transistor TriQuint Semiconductor

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