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T1G6001032-SM GaN RF Power Transistor

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Description

T1G6001032-SM 10W, 32V, DC * 6 GHz, GaN RF Power Transistor Applications * Military radar * Civilian radar * Professio.
The TriQuint T1G6001032-SM is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz.

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Features

* Frequency: DC to 6 GHz
* Output Power (P3dB): 10 W Peak at 3.1 GHz
* Linear Gain: >17 dB at 3.1 GHz
* Operating Voltage: 32 V

Applications

* Military radar
* Civilian radar
* Professional and military radio communications
* Test instrumentation
* Wideband or narrowband amplifiers

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