TC2997C Datasheet (Transcom)

TC2997C, GaAs Power FETs

The TC2997C is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Typical applicati

TC2997C Features

* 20 W Typical Power at 2.1 GHz

* 12 dB Typical Linear Power Gain at 2.1 GHz

* High Linearity: IP3 = 52 dBm Typical

* High Power Added Efficiency: Nominal PAE of 40 %

* Suitable for High Reliability Application

* Wg = 50 mm

* 100 % DC and RF Te