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TC2997G - GaAs Power FETs

Transcom

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Datasheet Details

Part number	TC2997G
Manufacturer	Transcom
File Size	164.02 KB
Description	GaAs Power FETs
Datasheet	TC2997G_Transcom.pdf

TC2997G Product details

Description

The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.

Features

16 W Typical Power at 3.5 GHz.
9 dB Typical Linear Power Gain at 3.5 GHz.
High Linearity: IP3 = 52 dBm Typical.
High Power Added Efficiency: Nominal PAE of 37 %.
100 % DC and RF Tested.
Flange Ceramic Package.
Suitable for WiMax and WLL.

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Other Datasheets by Transcom

TC2997A - GaAs Power FETs
TC2997B - GaAs Power FETs
TC2997C - GaAs Power FETs
TC2997D - 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
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Published: Aug 22, 2011 |