TC2996A Datasheet (Transcom)

TC2996A, GaAs Power FETs

The TC2996A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Typical applicati

TC2996A Features

* 12 W Typical Power at 1.6 GHz

* 13 dB Typical Linear Power Gain at 1.6 GHz

* High Linearity:IP3 = 50 dBm Typical

* High Power Added Efficiency:Nominal PAE of 40 %

* Suitable for High Reliability Application

* Wg = 30 mm

* 100 % DC and RF Test