TC2696 Datasheet (Transcom) - 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs

TC2696, 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs

The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Typical applications include high dynamic rang

TC2696 Features

* 2 W Typical Output Power at 2.45 GHz 14 dB Typical Linear Power Gain at 2.45 GHz High Linearity: IP3 = 43 dBm Typical at 2.45 GHz High Power Added Efficiency: Nominal PAE of 43 % at 2.45 GHz Suitable for High R