TC2181 - Low Noise and High Dynamic Range Packaged GaAs FETs

Transcom

Datasheet Details

Part number	TC2181
Manufacturer	Transcom
File Size	305.68 KB
Description	Low Noise and High Dynamic Range Packaged GaAs FETs
Datasheet	TC2181_Transcom.pdf

The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101 PHEMT Chip.

! ! ! ! ! ! ! ! ! ! 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 18.5 dBm Typical Power at 12 GHz 13 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9V Lg = 0.25 µm, Wg = 160 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO.

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Published: Mar 14, 2010 |