Description
The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor.
Features
- 0.3dB minimum noise figure @ 5GHz.
- 0.65dB minimum noise figure @ 12GHz.
- 14dB associated gain @ 5GHz.
- 10.5dB associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 : Source
Main Characteristics
Tamb = +25°C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise figure Associated gain 13 Min 10 Typ 30 0.3 14 Max 60 0.55 Unit mA dB dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSTC26237003
Specifications sub.
TC2623-UnitedMonolithicSemiconductors.pdf