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TW015Z120C Silicon Carbide N-Channel MOSFET

TW015Z120C Description

MOSFETs Silicon Carbide N-Channel MOS TW015Z120C TW015Z120C 1.Applications * Switching Voltage Regulators 2..

TW015Z120C Features

* (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ. ) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ. ) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0

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Silicon Carbide N-Channel MOSFET Toshiba
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