TW031V65C Silicon Carbide N-Channel MOSFET

TOSHIBA

Description

MOSFETs Silicon Carbide N-Channel MOS TW031V65C TW031V65C 1.Applications * Switching Voltage Regulators 2..

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Datasheet Specifications

Part number: TW031V65C
Manufacturer: Toshiba ↗
File Size: 705.30 KB
Datasheet: TW031V65C-TOSHIBA.pdf
Description: Silicon Carbide N-Channel MOSFET

Features

* (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ. ) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 31 mΩ (typ. ) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V

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TW031V65C Silicon Carbide N-Channel MOSFET TOSHIBA

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