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TW030N120C Silicon Carbide N-Channel MOSFET

TW030N120C Description

MOSFETs Silicon Carbide N-Channel MOS TW030N120C TW030N120C 1.Applications * Switching Voltage Regulators 2..

TW030N120C Features

* (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ. ) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 30 mΩ (typ. ) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0

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Silicon Carbide N-Channel MOSFET TOSHIBA
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