Datasheet4U Logo Datasheet4U.com

TTD1415B Silicon NPN Transistor

TTD1415B Description

Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B 1.Applications * High-Power Switching * Hammer Drivers 2.Fe.

TTD1415B Features

* (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015 Toshiba Corporation 1 Star

TTD1415B Applications

* High-Power Switching

📥 Download Datasheet

Preview of TTD1415B PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TTD1415 - NPN Transistor (INCHANGE)
  • TTD1410 - NPN Transistor (INCHANGE)
  • TTD1409B - NPN Transistor (INCHANGE)
  • TTD115N08A - 85V N-Channel Trench MOSFET (Unigroup)
  • TTD120N03AT - 30V N-Channel MOSFET (Unigroup)
  • TTD135N68A - 68V N-Channel Trench MOSFET (Unigroup)
  • TTD18P10AT - 100V P-Channel Trench MOSFET (Unigroup)
  • TTD70N07A - N-Channel Trench MOSFET (Unigroup)

📌 All Tags

Silicon NPN Transistor Toshiba
Toshiba TTD1415B-like datasheet