Datasheet Specifications
- Part number
- TTD1415B
- Manufacturer
- Toshiba ↗
- File Size
- 181.73 KB
- Datasheet
- TTD1415B-Toshiba.pdf
- Description
- Silicon NPN Transistor
Description
Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B 1.Applications * High-Power Switching * Hammer Drivers 2.Fe.
Features
* (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015 Toshiba Corporation 1 StarApplications
* High-Power SwitchingTTD1415B Distributors
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