TTD1409B NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TTD1409B .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = 400V(Min). High DC Current Gain. : hFE = 600(Min) @ IC= 2A. 100.

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Datasheet Specifications

Part number: TTD1409B
Manufacturer: INCHANGE
File Size: 197.82 KB
Datasheet: TTD1409B-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use high-voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Curren

TTD1409B Distributors

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TTD1409B NPN Transistor INCHANGE

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