TTA013 Silicon PNP Epitaxial Type Bipolar Transistors

Toshiba

Description

Bipolar Transistors Silicon PNP Epitaxial Type TTA013 TTA013 1.Applications * High-Speed Switching * DC-DC Converters 2..

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Datasheet Specifications

Part number: TTA013
Manufacturer: Toshiba ↗
File Size: 302.56 KB
Datasheet: TTA013-Toshiba.pdf
Description: Silicon PNP Epitaxial Type Bipolar Transistors

Features

* (1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA) (3) High-speed switching: tf = 65 ns (typ. ) (IC = -0.75 A) 3. Packaging and Internal Circuit PW-Mini 1. Base 2. Collector (Heatsi

Applications

* High-Speed Switching

TTA013 Distributors

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TTA013 Silicon PNP Epitaxial Type Bipolar Transistors Toshiba

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