Datasheet Specifications
- Part number
- TTA010
- Manufacturer
- Toshiba ↗
- File Size
- 286.00 KB
- Datasheet
- TTA010-Toshiba.pdf
- Description
- Silicon PNP Triple-Diffused Type Bipolar Transistors
Description
Bipolar Transistors Silicon PNP Triple-Diffused Type TTA010 TTA010 1.Applications * High-Voltage Switching 2..
Features
* (1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE = 100 to 300 (VCE = -10 V, IC = -20 mA) (3) Low collector-emitter saturation voltage: VCE(sat) = -0.3 V (max) (IC = -20 mA, IB = -2 mA) 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter PW-MiniTTA010 Distributors
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