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TTA007 Silicon PNP Transistor

TTA007 Description

TOSHIBA Transistor Silicon PNP Epitaxial Type TTA007 TTA007 High-Speed Switching Applications DC-DC Converter Applications Unit: mm * High.

TTA007 Applications

* DC-DC Converter Applications Unit: mm
* High DC current gain : hFE = 200 to 500 (IC =
* 0.1 A)
* Low collector-emitter saturation voltage : VCE(sat) =
* 0.2 V (max)
* High-speed switching : tf = 70 ns (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristi

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Silicon PNP Transistor Toshiba Semiconductor
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