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TTA008B Silicon PNP Epitaxial Type Bipolar Transistors

TTA008B Description

Bipolar Transistors Silicon PNP Epitaxial Type TTA008B 1.Applications * Power Amplifiers * Power Switching 2..

TTA008B Features

* (1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A) (3) High-speed switching : tstg = 300 ns (typ. ) (IC = -1A) (4) Complementary to TTC015B 3. Packaging and Internal Circuit (Note) TTA008B 1. Emitter 2.

TTA008B Applications

* Power Amplifiers

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Datasheet Details

Part number
TTA008B
Manufacturer
Toshiba ↗
File Size
313.29 KB
Datasheet
TTA008B-Toshiba.pdf
Description
Silicon PNP Epitaxial Type Bipolar Transistors

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📌 All Tags

Silicon PNP Epitaxial Type Bipolar Transistors Toshiba
Toshiba TTA008B-like datasheet