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TTA009 - Silicon PNP Epitaxial Type Bipolar Transistors

Features

  • (1) Low collector saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching : tstg = 300 ns (typ. ) (IC = -1 A) 3. Packaging and Internal Circuit TTA009 New PW-Mold 1. Base 2. Collector (Heatsink) 3. Emitter Start of commercial production 2015-04 1 2015-06-19 Rev.1.0 TTA009 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter volt.

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Datasheet Details

Part number TTA009
Manufacturer Toshiba
File Size 219.19 KB
Description Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet download datasheet TTA009 Datasheet

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Bipolar Transistors Silicon PNP Epitaxial Type TTA009 1. Applications • Power Amplifiers • Power Switching 2. Features (1) Low collector saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching : tstg = 300 ns (typ.) (IC = -1 A) 3. Packaging and Internal Circuit TTA009 New PW-Mold 1. Base 2. Collector (Heatsink) 3. Emitter Start of commercial production 2015-04 1 2015-06-19 Rev.1.0 TTA009 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -7 Collector current (DC) (Note 1) IC -3 A Collector current (pulsed) (Note 1) ICP -5 A Base current IB -1.
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