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TPH1400ANH Field Effect Transistor

TPH1400ANH Description

TPH1400ANH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1400ANH 1.Applications * * * DC-DC Converters Switching Voltage Regul.

TPH1400ANH Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 9.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 11.3 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packa

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Field Effect Transistor Toshiba
Toshiba TPH1400ANH-like datasheet