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TPH11006NL Silicon N-channel MOSFET

TPH11006NL Description

MOSFETs Silicon N-channel MOS (U-MOS-H) TPH11006NL 1.Applications * Switching Voltage Regulators * DC-DC Converters * Motor .

TPH11006NL Features

* (1) High-speed switching (2) Small gate charge: QSW = 6.4 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit

TPH11006NL Applications

* Switching Voltage Regulators
* DC-DC Converters

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Silicon N-channel MOSFET Toshiba
Toshiba TPH11006NL-like datasheet